Technische Universität Dresden - Faculty of Electrical and Computer Engineering, Institute of Circuits and Systems, Chair of Electron Devices and Integrated Circuits
Technische Universität Dresden as a University of Excellence is one of the leading universities in Germany, and is ranked among the 100 most innovative universities worldwide. Its distinguishing feature is a strong focus on research as well as its diversified offer of more than 120 degree programs in Engineering Sciences, Natural Sciences, Humanities & Social Sciences and Medicine.
It pursues a long-term overall development program aimed at making TU Dresden an international top university.
Research Associate (m/f/x)
(subject to personal qualification employees are remunerated according to salary group E 13 TV-L)
At TU Dresden, Faculty of Electrical and Computer Engineering, Institute of Circuits and Systems the Chair of Electron Devices and Integrated Circuits (CEDIC) offers a project position starting as soon as possible. The position is limited for 36 months with the option of extension subject to further third-party funded projects. The period of employment is governed by § 2 (2) Fixed Term Research Contracts Act (Wissenschaftszeitvertragsgesetz - WissZeitVG).
CEDIC has been an internationally recognized research group in the area of device modeling for high-frequency (HF) applications, with significant contributions in particular to the theoretical understanding and exploration of high-frequency performance and physical limits of heterojunction bipolar transistors and carbon nanotube based field-effect transistors (CNTFETs) as well as to the development of related models and tools for circuit design. CEDIC has also been involved in various research projects funded by the German National Science Foundation (DFG), German Federal government, the European Union and DARPA.
The successful candidate is expected to contribute to a DFG funded research project on ultra-scaled SiGeC HBTs beyond the existing roadmap. Specific tasks comprise: (i) Determination of transport related material properties in extremely scaled (nm scale) HBT layers based on atomistic simulation and experimental data; (ii) Development of corresponding physical models for use in semi-classical device simulation (such as BTE, DD) for exploring the impact of scaling of the vertical HBT structure on its electrical characteristics. (iii) Exploration of the impact of random atomic arrangement in ultra-thin layers on the variation of electrical SiGeC HBT device and circuit performance beyond standard process tolerances. (iv) Bridging the gap between material science and electrical engineering by establishing a multi-scale simulation capability spanning from atomistic to circuit simulation. The work requires a strong cooperation within a team of researchers at CEDIC and at the project cooperation partners. Participation in progress reports, presentations at project meetings and publications is expected.
Applicants should hold an outstanding university degree (Master/Dipl.-Ing.) in solid-state physics with focus on semiconductor electronics. Experience in the following areas is mandatory: carrier transport physics in electronic devices; computational physics, preferably hands-on experience with numerical device simulation (TCAD) tools such as Boltzmann transport equation and drift-diffusion solvers. Additional knowledge on HBT operation principles and semiconductor technology as well as on atomistic simulation will be a prerequisite for a successful application. Excellent English language and communication skills are highly desired.
How to apply:
Applications from women are particularly welcome. The same applies to people with disabilities.
Your application (in English only) should include: motivation letter, CV with description of completed projects in the areas described above, transcript of grades (i.e. the official list of coursework including your grades) and proof of English language skills. Please submit your comprehensive application by February 18, 2022 (stamped arrival date of the university central mail service applies), preferably via the TU Dresden SecureMail Portal https://securemail.tu-dresden.de quoting “Research Associate application” in the subject header by sending it as a single pdf document to email@example.com or by mail to: TU Dresden, Fakultät Elektrotechnik und Informationstechnik, Institut für Grundlagen der Elektrotechnik und Elektronik, Professur für Elektronische Bauelemente und Integrierte Schaltungen, Herrn Prof. Michael Schröter, Helmholtzstr. 10, 01069 Dresden. Please submit copies only, as your application will not be returned to you. Expenses incurred in attending interviews cannot be reimbursed.
Reference to data protection: Your data protection rights, the purpose for which your data will be processed, as well as further information about data protection is available to you on the website: https://tu-dresden.de/karriere/datenschutzhinweis.
TU Dresden, Fakultät Elektrotechnik und Informationstechnik, Institut für Grundlagen der Elektrotechnik und Elektronik, Professur für Elektronische Bauelemente und Integrierte Schaltungen, Herrn Prof. Michael Schröter, Helmholtzstr. 10, 01069 Dresden
motivation letter, CV with description of completed projects in the areas described above, transcript of grades (i.e. the official list of coursework including your grades) and proof of English language skills